Диск SSD SAMSUNG 980 250GB M.2 NVMe PCIe 3.0 Магазин,Сервиз SSI Варна Компютри,Мрежи,Видеонаблюдение.
- Марка: SAMSUNG
- Код на продукта: MZ-V8V250BW
- Наличност: В наличност
103.00лв.
Диск SSD SAMSUNG 980 250GB M.2 NVMe PCIe 3.0 MZ-V8V250BW
| Име на продукта: | SAMSUNG SSD 980 250GB M.2 NVMe PCIe 3.0 2.900MB/s read 1.300MB/s write |
| Описание : | Samsung 980 MZ-V8V250BW - SSD - encrypted - 250 GB - internal - M.2 2280 - PCIe 3.0 x4 (NVMe) - 256-bit AES - TCG Opal Encryption |
| EAN: | 8806090572234 |
| Гаранция на производител : | 60 Months Bring-In Warranty |
| General | |
| Device Type: | Solid state drive - internal |
| Capacity: | 250 GB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| Form Factor: | M.2 2280 |
| Interface: | PCIe 3.0 x4 (NVMe) |
| Features: | TRIM support, Auto Garbage Collection Algorithm, Device Sleep support, Host Memory Buffer (HMB), NVM Express (NVMe) 1.4, Samsung V-NAND 3bit MLC Technology, Samsung Pablo Controller, Intelligent TurboWrite Technology, state-of-the-art thermal control, S.M.A.R.T. |
| Width: | 22.15 mm |
| Depth: | 80.15 mm |
| Height: | 2.38 mm |
| Weight: | 8 g |
| Performance | |
| SSD Endurance: | 150 TB |
| Internal Data Rate: | 2900 MBps (read) / 1300 MBps (write) |
| 4KB Random Read: | 17000 IOPS |
| 4KB Random Write: | 53000 IOPS |
| Maximum 4KB Random Write: | 320000 IOPS |
| Maximum 4KB Random Read: | 230000 IOPS |
| Reliability | |
| MTBF: | 1,500,000 hours |
| Expansion & Connectivity | |
| Interfaces: | PCI Express 3.0 x4 (NVMe) - M.2 Card |
| Compatible Bay: | M.2 2280 |
| Power | |
| Power Consumption: | 3.7 Watt (average) 5.6 Watt (maximum) 0.045 Watt (idle) |
| Software & System Requirements | |
| Software Included: | Samsung Magician Software |
| Miscellaneous | |
| Compliant Standards: | IEEE 1667 |
| Manufacturer Warranty | |
| Service & Support: | Limited warranty - 5 years |
| Environmental Parameters | |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |